Determintation of the thickness of thin metal films by the interference effect on selenium films

Volume 9, Issue 6, December 2024     |     PP. 216-223      |     PDF (452 K)    |     Pub. Date: November 18, 2024
DOI: 10.54647/physics140654    41 Downloads     3386 Views  

Author(s)

A.V.Smirnov, Chuvash State University named after I.N. Ulyanov, Russia, Cheboksary
A.A. Terentyev, Chuvash State University named after I.N. Ulyanov, Russia, Cheboksary
S.A. Vasilyev, Chuvash State University named after I.N. Ulyanov, Russia, Cheboksary
N.I Koltcov, Chuvash State University named after I.N. Ulyanov, Russia, Cheboksary

Abstract
Current trends in the development of thin-film technologies and the semiconductor industry lead to a decrease in the characteristic dimensions of the structures being created, which places increased demands on the control of their geometric characteristics - layer thicknesses. Methods for determining the thickness of thin metal films are considered. Thin films of amorphous selenium, silver and silver layers on a selenium film are synthesized. Optical transmission spectra are recorded using a UV-vis spectrophotometer. A new method for determining the thickness of thin metal films by the interference effect on certain thicknesses of selenium films is proposed. The corresponding calculations are carried out.

Keywords
thin-film systems, selenium films, thin metal films, silver, interference maxima, spectrophotometry, film electrodes for capacitors, measurement of metal film thicknesses

Cite this paper
A.V.Smirnov, A.A. Terentyev, S.A. Vasilyev, N.I Koltcov, Determintation of the thickness of thin metal films by the interference effect on selenium films , SCIREA Journal of Physics. Volume 9, Issue 6, December 2024 | PP. 216-223. 10.54647/physics140654

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